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| SUM70N06-11 New Product Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.011 ID (A) 70 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial D TO-263 G G DS S N-Channel MOSFET Top View SUM70N06-11 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc PD TJ, Tstg TC = 100_C ID IDM IAR EAR Symbol VGS Limit "20 70 49 160 35 61 120b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient--PCB Mountc Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72008 S-03592--Rev. B, 31-Mar-03 www.vishay.com Symbol RthJA RthJC Limit 40 1.25 Unit _C/W 1 SUM70N06-11 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 48 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 50 70 0.0085 0.011 0.019 0.025 S W 60 2.0 3.0 4.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr Timec td(off) tf VDD = 30 V, RL = 0.43 W ID ] 70 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 70 A , VGS = 0 V, VDS = 25 V, f = 1 MHz 2500 400 165 40 13 12 15 11 30 7 25 20 50 15 ns 60 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 70 A, di/dt = 100 A/ms , m IF = 50 A, VGS = 0 V 1.0 40 1.7 0.034 70 A 160 1.5 80 3.5 0.14 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72008 S-03592--Rev. B, 31-Mar-03 SUM70N06-11 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 VGS = 10 thru 7 V 120 I D - Drain Current (A) 6V I D - Drain Current (A) 120 160 Vishay Siliconix Transfer Characteristics 80 5V 40 80 40 TC = 125_C 25_C - 55_C 0 4V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = - 55_C 100 g fs - Transconductance (S) 25_C 80 125_C r DS(on) - On-Resistance ( ) 0.012 0.015 On-Resistance vs. Drain Current 0.009 VGS = 10 V 60 0.006 40 20 0.003 0 0 10 20 30 40 50 60 0.000 0 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 3500 3000 C - Capacitance (pF) 2500 2000 1500 1000 500 0 0 10 20 30 40 50 60 Crss Ciss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 70 A 12 8 Coss 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72008 S-03592--Rev. B, 31-Mar-03 www.vishay.com 3 SUM70N06-11 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 60 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 80 On-Resistance vs. Junction Temperature ID = 10 m A r DS(on) - On-Resistance (W) (Normalized) 100 I Dav (a) 75 10 IAV (A) @ TJ = 25_C 70 1 IAV (A) @ TJ = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 65 60 - 50 - 25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72008 S-03592--Rev. B, 31-Mar-03 SUM70N06-11 New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 80 70 60 I D - Drain Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 I D - Drain Current (A) 100 1000 10 ms 100 ms Vishay Siliconix Safe Operating Area Limited by rDS(on) 1 ms 10 1 TC = 25_C Single Pulse 10 ms 100 ms dc TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72008 S-03592--Rev. B, 31-Mar-03 www.vishay.com 5 |
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